IXXH30N65B4 Insulated Gate Bipolar Transistor, 65A I(C), 650V V(BR)CES, N-Channel,; IXXH30N65B4
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.