SM2G200US60 Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, 7PM-BA, 7 PIN; SM2G200US60
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.