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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

KR221K03

KR221K03

KR221K03 Power Bipolar Transistor, 30A I(C), 1000V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 5 Pin, D19, 5 PIN; KR221K03
DF08S-G

DF08S-G

DF08S-G Bridge Rectifier Diode, 1A, 800V V(RRM),; DF08S-G
2SC4381

2SC4381

2SC4381 Power Bipolar Transistor, 2A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220F, FM20, 3 PIN; 2SC4381
R6221240HSOO

R6221240HSOO

R6221240HSOO Rectifier Diode, 1 Phase, 1 Element, 400A, 1200V V(RRM), Silicon,; R6221240HSOO
MB358W

MB358W

MB358W Bridge Rectifier Diode, 1 Phase, 35A, 800V V(RRM), Silicon, ROHS COMPLIANT, METAL, MB-W, 4 PIN; MB358W
KBPC2508-G

KBPC2508-G

KBPC2508-G Bridge Rectifier Diode, 25A, 800V V(RRM),; KBPC2508-G
MMBT4124

MMBT4124

MMBT4124 20 V NPN Bipolar Transistor, 3000-REEL; MMBT4124
VI-J41-EY

VI-J41-EY

VI-J41-EY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-J41-EY
IXA12IF1200PB

IXA12IF1200PB

IXA12IF1200PB Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, ROHS COMPLIANT, PLASTIC, COPACK-3; IXA12IF1200PB
VSKTF200-12HJ

VSKTF200-12HJ

VSKTF200-12HJ Silicon Controlled Rectifier, 444A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 2 Element, ROHS COMPLIANT, MAGN-A-PAK-7; VSKTF200-12HJ