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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

IXYK100N120C3

IXYK100N120C3

IXYK100N120C3 Insulated Gate Bipolar Transistor, 188A I(C), 1200V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN; IXYK100N120C3
BSM300GA170DN2S

BSM300GA170DN2S

BSM300GA170DN2S Insulated Gate Bipolar Transistor, 300A I(C), 1700V V(BR)CES, N-Channel, SSW SENSE 1, 4 PIN; BSM300GA170DN2S
SMMUN2211LT3G

SMMUN2211LT3G

SMMUN2211LT3G NPN Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 10000-REEL; SMMUN2211LT3G
GBJ2510-BP

GBJ2510-BP

GBJ2510-BP Bridge Rectifier Diode, 1 Phase, 25A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBJ, 4 PIN; GBJ2510-BP
V48B48T250AL2

V48B48T250AL2

V48B48T250AL2 DC-DC Regulated Power Supply Module, 1 Output, 250W, Hybrid; V48B48T250AL2
MCD95-14io8B

MCD95-14io8B

MCD95-14io8B Silicon Controlled Rectifier, 180A I(T)RMS, 116000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element, TO-240AA, TO-240AA, 7 PIN; MCD95-14io8B
W5282ZC240

W5282ZC240

W5282ZC240 DIODE 8200 A, 2400 V, SILICON, RECTIFIER DIODE, Rectifier Diode; W5282ZC240
QRC1410T30

QRC1410T30

QRC1410T30 Rectifier Diode, 1 Phase, 2 Element, 61A, 1400V V(RRM), Silicon, MODULE-3; QRC1410T30
CD431260A

CD431260A

CD431260A Silicon Controlled Rectifier, 95A I(T)RMS, 60000mA I(T), 1200V V(DRM), 1200V V(RRM), 2 Element, POW-R-BLOK-7; CD431260A
GBPC3510W-G

GBPC3510W-G

GBPC3510W-G Bridge Rectifier Diode, 35A, 1000V V(RRM),; GBPC3510W-G