DIM250WLS06-S Insulated Gate Bipolar Transistor, 250A I(C), 600V V(BR)CES, N-Channel, W, MODULE-7; DIM250WLS06-S
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.