IKP08N65F5XKSA1 Insulated Gate Bipolar Transistor, 18A I(C), 650V V(BR)CES, N-Channel,; IKP08N65F5XKSA1
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.