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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

T850H-6I

T850H-6I

T850H-6I 8 A - 600 V - 150°C H-Series Triacs; T850H-6I
BSC014N06NS

BSC014N06NS

BSC014N06NS Power Field-Effect Transistor, 30A I(D), 60V, 0.00145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8FL, 8 PIN; BSC014N06NS
VI-B2L-EV

VI-B2L-EV

VI-B2L-EV DC-DC Booster Module; VI-B2L-EV
VS-22RIA120

VS-22RIA120

VS-22RIA120 Silicon Controlled Rectifier,; VS-22RIA120
VI-J5Z-EY

VI-J5Z-EY

VI-J5Z-EY DC-DC Regulated Power Supply Module, 1 Output, Hybrid,; VI-J5Z-EY
FZT795ATC

FZT795ATC

FZT795ATC Power Bipolar Transistor, 0.5A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin; FZT795ATC
VI-2TM-EV

VI-2TM-EV

VI-2TM-EV DC-DC Regulated Power Supply Module, 1 Output, 150W, Hybrid, MODULE-9; VI-2TM-EV
IRG7PH37K10DPBF

IRG7PH37K10DPBF

IRG7PH37K10DPBF Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel; IRG7PH37K10DPBF
F1827D1400

F1827D1400

F1827D1400 Rectifier Diode, 1 Phase, 1 Element, 25A, 1400V V(RRM), Silicon, MODULE-2; F1827D1400
VVZ40-16IO1

VVZ40-16IO1

VVZ40-16IO1 Silicon Controlled Rectifier, 25A I(T)RMS, 34000mA I(T), 1600V V(DRM), 1600V V(RRM), 3 Element, MODULE-8; VVZ40-16IO1