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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

MJF18008G

MJF18008G

MJF18008G 8.0 A, 450 V NPN Bipolar Power Transistor, TO-220 3 LEAD FULLPAK, 50-TUBE; MJF18008G
APTGT30DDA60T3G

APTGT30DDA60T3G

APTGT30DDA60T3G Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP3, 25 PIN; APTGT30DDA60T3G
CS411499B

CS411499B

CS411499B Rectifier Diode, 1 Phase, 1 Element, 100A, 1400V V(RRM), Silicon, POW-R-BLOK-3; CS411499B
VI-J30-IW

VI-J30-IW

VI-J30-IW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid, HALF BRICK PACKAGE-9; VI-J30-IW
VI-JWP-EX

VI-JWP-EX

VI-JWP-EX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-JWP-EX
170M3510

170M3510

170M3510 Electric Fuse, 63A, 700VAC, 200000A (IR), Inline/holder,; 170M3510
ST110S04P0V

ST110S04P0V

ST110S04P0V Silicon Controlled Rectifier, 175A I(T)RMS, 110000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-209AC, HERMETIC SEALED, METAL, TO-94, 3 PIN; ST110S04P0V
IRGB10B60KDPBF

IRGB10B60KDPBF

IRGB10B60KDPBF Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3; IRGB10B60KDPBF
BLF8G22LS-240J

BLF8G22LS-240J

BLF8G22LS-240J RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2; BLF8G22LS-240J
VI-24F-CW

VI-24F-CW

VI-24F-CW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid,; VI-24F-CW