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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-BT4-IU

VI-BT4-IU

VI-BT4-IU DC-DC Booster Module; VI-BT4-IU
EFD20G

EFD20G

EFD20G Silicon Controlled Rectifier, 1400V V(RRM), 3 Element, ROHS COMPLIANT PACKAGE-9; EFD20G
2SD1857TV2P

2SD1857TV2P

2SD1857TV2P Small Signal Bipolar Transistor, 2A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, ATV, 3 PIN; 2SD1857TV2P
ZW31215

ZW31215

ZW31215 Analog Circuit,; ZW31215
KSC2690AYSTU

KSC2690AYSTU

KSC2690AYSTU NPN Epitaxial Silicon Transistor, 1920-TUBE; KSC2690AYSTU
FSBB20CH60CT

FSBB20CH60CT

FSBB20CH60CT Intelligent Power Module (IPM), Motion Control, 60-TUBE; FSBB20CH60CT
SMP1321-079LF

SMP1321-079LF

SMP1321-079LF Pin Diode, Silicon, SC-79, 2 PIN; SMP1321-079LF
S8040NRP

S8040NRP

S8040NRP Silicon Controlled Rectifier, 40A I(T)RMS, 25000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-263AB, ROHS COMPLIANT, PLASTIC, TO-263, D2PAK-3; S8040NRP
SEMIX101GD126HDS

SEMIX101GD126HDS

SEMIX101GD126HDS Insulated Gate Bipolar Transistor, 130A I(C), 1200V V(BR)CES, N-Channel, CASE SEMIX 13S, 20 PIN; SEMIX101GD126HDS
IRGP4263D-EPBF

IRGP4263D-EPBF

IRGP4263D-EPBF Insulated Gate Bipolar Transistor, 90A I(C), 650V V(BR)CES, N-Channel,; IRGP4263D-EPBF