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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

BC859BLT1G

BC859BLT1G

BC859BLT1G General Purpose Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL; BC859BLT1G
MCD26-08io8B

MCD26-08io8B

MCD26-08io8B Silicon Controlled Rectifier, 50A I(T)RMS, 27000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-240AA, TO-240AA, 4 PIN; MCD26-08io8B
VI-261-CW

VI-261-CW

VI-261-CW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid,; VI-261-CW
2SD1802S-E

2SD1802S-E

2SD1802S-E Bipolar Transistor, 50V, 3A, Low VCE(sat) NPN Single TP/TP-FA hFE = 140-280, IPAK / TP, 500-BLKBG; 2SD1802S-E
CM200DU-34KA

CM200DU-34KA

CM200DU-34KA Insulated Gate Bipolar Transistor, 200A I(C), 1700V V(BR)CES, N-Channel,; CM200DU-34KA
A70QS500-4

A70QS500-4

A70QS500-4 Electric Fuse, 500A, 700VAC, 700VDC, 200000A (IR), Inline/holder,; A70QS500-4
AFT05MP075NR1

AFT05MP075NR1

AFT05MP075NR1 RF POWER, FET; AFT05MP075NR1
1SV246-TL-E

1SV246-TL-E

1SV246-TL-E PIN Diode, 50V, 50mA, rs=5 Ohm(typ), Dual MCP, SC-70 / MCP3, 3000-REEL; 1SV246-TL-E
GS-R405S

GS-R405S

GS-R405S 1-OUTPUT DC-DC REG PWR SUPPLY MODULE; GS-R405S
QIS4506001

QIS4506001

QIS4506001 Insulated Gate Bipolar Transistor, 60A I(C), 4500V V(BR)CES, N-Channel,; QIS4506001