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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

MV2101G

MV2101G

MV2101G DIODE HF-UHF BAND, 6.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, TO-92, LEAD FREE, PLASTIC, CASE 182-06, TO-226AC, 2 PIN, Variable Capacitance Diode; MV2101G
VI-B2L-CW

VI-B2L-CW

VI-B2L-CW DC-DC Booster Module, 1 Output, 100W, Hybrid, PACKAGE-9; VI-B2L-CW
PKE4325PI

PKE4325PI

PKE4325PI DC-DC Regulated Power Supply Module, 2 Output, 30W, Hybrid; PKE4325PI
DDTC143TUA-7

DDTC143TUA-7

DDTC143TUA-7 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3; DDTC143TUA-7
BAT54CTT1

BAT54CTT1

BAT54CTT1 Common Cathode Schottky Diode, dual, 30 V, SC-75 (SOT-416) 3 LEAD, 3000-REEL; BAT54CTT1
C354M

C354M

C354M Silicon Controlled Rectifier, 274.75A I(T)RMS, 250000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, T62, 3 PIN; C354M
2N4362

2N4362

2N4362 Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element; 2N4362
IXYP8N90C3

IXYP8N90C3

IXYP8N90C3 Insulated Gate Bipolar Transistor, 20A I(C), 900V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN; IXYP8N90C3
1N5711W-7-F

1N5711W-7-F

1N5711W-7-F Rectifier Diode, Schottky, 1 Element, 0.015A, 70V V(RRM), Silicon, GREEN, PLASTIC PACKAGE-2; 1N5711W-7-F
BD249C-S

BD249C-S

BD249C-S Power Bipolar Transistor, 25A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, SOT-93, 3 PIN; BD249C-S