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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-24R-IU

VI-24R-IU

VI-24R-IU DC-DC Regulated Power Supply Module, 1 Output, 200W, Hybrid,; VI-24R-IU
2N5461RLRAG

2N5461RLRAG

2N5461RLRAG Small Signal JFET P-Channel, TO-92 (TO-226) 5.33mm Body Height, 2000-REEL; 2N5461RLRAG
LD412260

LD412260

LD412260 Rectifier Diode, 1 Phase, 2 Element, 600A, 2200V V(RRM), Silicon, POW-R-BLOK-3; LD412260
FMP26-02P

FMP26-02P

FMP26-02P Power Field-Effect Transistor, 26A I(D), 200V, 0.06ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS, I4PAK-5; FMP26-02P
PE608N

PE608N

PE608N Rectifier Diode, 1 Phase, 3 Element, 60A, 800V V(RRM), Silicon,; PE608N
S2010F1

S2010F1

S2010F1 Silicon Controlled Rectifier, 10A I(T)RMS, 8000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-202, TO-202, 3 PIN; S2010F1
82RIA120

82RIA120

82RIA120 Silicon Controlled Rectifier, 125 A, 1200 V, SCR, TO-208AD; 82RIA120
KD221275

KD221275

KD221275 Transistor; KD221275
KED245A1

KED245A1

KED245A1 Power Bipolar Transistor, 15A I(C), 600V V(BR)CEO, 6-Element, NPN, Silicon, Plastic/Epoxy, 17 Pin, D42, 17 PIN; KED245A1
SI4276DY-T1-GE3

SI4276DY-T1-GE3

SI4276DY-T1-GE3 Small Signal Field-Effect Transistor, 8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8; SI4276DY-T1-GE3