Scan Part Number

Tap the focus box or CAPTURE to scan the part number.

Pinch screen or tap 1.4x button to zoom.

Recognizing Part Number...

IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-BW1-EW

VI-BW1-EW

VI-BW1-EW DC-DC Booster Module, 1 Output, 100W, Hybrid, 4.600 X 2.400 INCH, 0.500 INCH HEIGHT, MODULE-9; VI-BW1-EW
BLS7G3135LS-200U

BLS7G3135LS-200U

BLS7G3135LS-200U RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2; BLS7G3135LS-200U
TT131N12

TT131N12

TT131N12 Silicon Controlled Rectifier, 220A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 2 Element, MODULE-5; TT131N12
APTGF50DU120TG

APTGF50DU120TG

APTGF50DU120TG Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SP4, MODULE-12; APTGF50DU120TG
VS-110CNQ045APBF

VS-110CNQ045APBF

VS-110CNQ045APBF Rectifier Diode, Schottky, 1 Phase, 2 Element, 45V V(RRM), Silicon, LEAD FREE, PLASTIC, D-61-8, 3 PIN; VS-110CNQ045APBF
R9G01018XX

R9G01018XX

R9G01018XX Rectifier Diode, 1 Element, 1800A, 1000V V(RRM),; R9G01018XX
VI-2WB-IW

VI-2WB-IW

VI-2WB-IW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid,; VI-2WB-IW
IXSN80N60AU1

IXSN80N60AU1

IXSN80N60AU1 Insulated Gate Bipolar Transistor, 160A I(C), 600V V(BR)CES, N-Channel, MINIBLOC-4; IXSN80N60AU1
VI-27L-EY

VI-27L-EY

VI-27L-EY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-27L-EY
VI-B4Y-IV

VI-B4Y-IV

VI-B4Y-IV DC-DC Booster Module, 1 Output, Hybrid, 4.600 X 2.400 INCH, 0.500 INCH HEIGHT, MODULE-9; VI-B4Y-IV