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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

T510065004AQ

T510065004AQ

T510065004AQ Silicon Controlled Rectifier, 80A I(T)RMS, 80000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-94, HERMETIC SEALED, METAL PACKAGE-3; T510065004AQ
NSBA114EF3T5G

NSBA114EF3T5G

NSBA114EF3T5G PNP Bipolar Digital Transistor (BRT) 50 V, 100 mA, 10 k, 10 k, SOT-1123, 1.0x0.6x0.37, 0.35P, 8000-REEL; NSBA114EF3T5G
VI-21X-EU

VI-21X-EU

VI-21X-EU DC-DC Regulated Power Supply Module, 1 Output, 200W, Hybrid, MODULE-9; VI-21X-EU
LMN200B01-7

LMN200B01-7

LMN200B01-7 Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6; LMN200B01-7
BDX34BG

BDX34BG

BDX34BG 10 A, 80 V PNP Darlington Bipolar Power Transistor, TO-220 3 LEAD STANDARD, 50-TUBE; BDX34BG
2SA2222SG

2SA2222SG

2SA2222SG Bipolar Transistor, -50V, -10A, Low VCE(sat), PNP TO-220F-3FS Bipolar Transistor, -50V, -10A, Low VCE(sat) PNP TO-220F-3FS, TO-220F-3FS, 50-TUBE; 2SA2222SG
IXGH40N60A

IXGH40N60A

IXGH40N60A Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN; IXGH40N60A
PDT15016

PDT15016

PDT15016 Silicon Controlled Rectifier, 235A I(T)RMS, 150000mA I(T), 1600V V(DRM), 1600V V(RRM), 2 Element, MODULE-8; PDT15016
IXGF20N250

IXGF20N250

IXGF20N250 Insulated Gate Bipolar Transistor, 23A I(C), 2500V V(BR)CES, N-Channel, PLASTIC, ISOPLUS, I4PAC-3; IXGF20N250
VI-BNN-CU

VI-BNN-CU

VI-BNN-CU DC-DC Booster Module, 1 Output, 200W, Hybrid, PACKAGE-9; VI-BNN-CU