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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

2N6038

2N6038

2N6038 4.0 A, 60 V NPN Darlington Bipolar Power Transistor, TO-225, 500-BLKBX; 2N6038
VI-B3F-CW

VI-B3F-CW

VI-B3F-CW DC-DC Booster Module, 100W; VI-B3F-CW
VI-J5D-EW

VI-J5D-EW

VI-J5D-EW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid, HALF BRICK PACKAGE-9; VI-J5D-EW
SW12HHR300

SW12HHR300

SW12HHR300 DIODE 380 A, 1200 V, SILICON, RECTIFIER DIODE, Rectifier Diode; SW12HHR300
APTGF50TDU120PG

APTGF50TDU120PG

APTGF50TDU120PG Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SP6-P, MODULE-21; APTGF50TDU120PG
VWO50-12IO7

VWO50-12IO7

VWO50-12IO7 Silicon Controlled Rectifier, 36A I(T)RMS, 23000mA I(T), 1200V V(DRM), 1200V V(RRM), 6 Element, MODULE-12; VWO50-12IO7
VDI130-06P1

VDI130-06P1

VDI130-06P1 Insulated Gate Bipolar Transistor, 121A I(C), 600V V(BR)CES, N-Channel, ECOPAC-13; VDI130-06P1
HTZ130B38K

HTZ130B38K

HTZ130B38K Rectifier Diode, 2 Element, 1A, 38000V V(RRM), Silicon, ZB, 3 PIN; HTZ130B38K
TB4S-G

TB4S-G

TB4S-G Bridge Rectifier Diode, 1A, 400V V(RRM),; TB4S-G
VI-B31-CV

VI-B31-CV

VI-B31-CV DC-DC Booster Module, 1 Output, 150W, Hybrid, 4.600 X 2.400 INCH, 0.500 INCH HEIGHT, MODULE-9; VI-B31-CV