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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

MCD26-14IO8B

MCD26-14IO8B

MCD26-14IO8B Silicon Controlled Rectifier, 50A I(T)RMS, 27000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element, TO-240AA, TO-240AA, 4 PIN; MCD26-14IO8B
VI-26F-IV

VI-26F-IV

VI-26F-IV DC-DC Regulated Power Supply Module, 1 Output, 150W, Hybrid,; VI-26F-IV
TM55EZ-H

TM55EZ-H

TM55EZ-H Silicon Controlled Rectifier, 86.35A I(T)RMS, 55000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element,; TM55EZ-H
FGT412

FGT412

FGT412 Insulated Gate Bipolar Transistor; FGT412
IXXH50N60C3

IXXH50N60C3

IXXH50N60C3 Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN; IXXH50N60C3
APTGT100DA60T1G

APTGT100DA60T1G

APTGT100DA60T1G Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP1, 12 PIN; APTGT100DA60T1G
T1050H-6G

T1050H-6G

T1050H-6G 10 A - 600 V - 150 °C H-series Triacs; T1050H-6G
IRGP4063D1-EPBF

IRGP4063D1-EPBF

IRGP4063D1-EPBF Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel,; IRGP4063D1-EPBF
MSKD60-12

MSKD60-12

MSKD60-12 Rectifier Diode, 1 Phase, 2 Element, 60A, 1200V V(RRM), Silicon, CASE D1, 3 PIN; MSKD60-12
2SA1179N6-TB-E

2SA1179N6-TB-E

2SA1179N6-TB-E Bipolar Transistor, (-)50V, (-)150mA, Low VCE(sat), (PNP)NPN Single CPA, SOT-23 / CPA, 3000-REEL; 2SA1179N6-TB-E