2SC4960 Power Bipolar Transistor, 1A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, SC-92, TOP-3F-A1, FULL PACK-3; 2SC4960
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.