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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-B6Y-CV

VI-B6Y-CV

VI-B6Y-CV DC-DC Booster Module, 1 Output, Hybrid, 4.600 X 2.400 INCH, 0.500 INCH HEIGHT, MODULE-9; VI-B6Y-CV
HSMS-282C-BLKG

HSMS-282C-BLKG

HSMS-282C-BLKG Mixer Diode, C Band, Silicon, LEAD FREE, MINIATURE, SC-70, 3 PIN; HSMS-282C-BLKG
VI-27R-EY

VI-27R-EY

VI-27R-EY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-27R-EY
MCD95-18IO1B

MCD95-18IO1B

MCD95-18IO1B Silicon Controlled Rectifier, 180A I(T)RMS, 180000mA I(T), 1800V V(DRM), 1800V V(RRM), 1 Element, TO-240AA, TO-240AA, 7 PIN; MCD95-18IO1B
PP100T060

PP100T060

PP100T060 Insulated Gate Bipolar Transistor; PP100T060
ND431425

ND431425

ND431425 Silicon Controlled Rectifier, 393A I(T)RMS, 250000mA I(T), 1400V V(DRM), 1400V V(RRM), 2 Element, POW-R-BLOK-7; ND431425
PD57060S-E

PD57060S-E

PD57060S-E 60W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package; PD57060S-E
BTW69-600RG

BTW69-600RG

BTW69-600RG 50 A standard SCR Thyristor in TOP3 Ins.; BTW69-600RG
2SD2153T100V

2SD2153T100V

2SD2153T100V Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, SC-62, 3 PIN; 2SD2153T100V
IXTH110N25T

IXTH110N25T

IXTH110N25T Power Field-Effect Transistor, 110A I(D), 250V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN; IXTH110N25T