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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-J1D-IY

VI-J1D-IY

VI-J1D-IY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-J1D-IY
A70QS600-4K

A70QS600-4K

A70QS600-4K Electric Fuse, 600A, 700VAC, 700VDC, 200000A (IR), Inline/holder,; A70QS600-4K
2N1799

2N1799

2N1799 Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 500V V(DRM), 500V V(RRM), 1 Element; 2N1799
L2004L3

L2004L3

L2004L3 4 Quadrant Logic Level TRIAC, 200V V(DRM), 4A I(T)RMS, TO-220AB, TO-220, 3 PIN; L2004L3
GBPC3506W-G

GBPC3506W-G

GBPC3506W-G Bridge Rectifier Diode, 35A, 600V V(RRM),; GBPC3506W-G
T607041544BT

T607041544BT

T607041544BT Silicon Controlled Rectifier, 235A I(T)RMS, 235000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-93, TO-93, 3 PIN; T607041544BT
HAS030YD-A

HAS030YD-A

HAS030YD-A DC-DC Regulated Power Supply Module, 1 Output, 60W; HAS030YD-A
MBN400C20

MBN400C20

MBN400C20 Insulated Gate Bipolar Transistor, 400A I(C), 2000V V(BR)CES, N-Channel; MBN400C20
MDD710-22N1

MDD710-22N1

MDD710-22N1 DIODE 1198 A, 2200 V, SILICON, RECTIFIER DIODE, Rectifier Diode; MDD710-22N1
5SND0800M170100

5SND0800M170100

5SND0800M170100 Insulated Gate Bipolar Transistor, 800A I(C), 1700V V(BR)CES, N-Channel, HIPAK-10; 5SND0800M170100