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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

CS611616A

CS611616A

CS611616A Rectifier Diode, 1 Phase, 1 Element, 165A, 1600V V(RRM), Silicon, POW-R-BLOK-3; CS611616A
L2004F51TP

L2004F51TP

L2004F51TP 4 Quadrant Logic Level TRIAC, 200V V(DRM), 4A I(T)RMS, TO-202AB, TO-202AB, 3 PIN; L2004F51TP
Q2008F443

Q2008F443

Q2008F443 TRIAC, 200V V(DRM), 8A I(T)RMS, TO-202AB,; Q2008F443
VI-273-CW

VI-273-CW

VI-273-CW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid, MODULE-9; VI-273-CW
R355CH12

R355CH12

R355CH12 Silicon Controlled Rectifier, 2600A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element; R355CH12
R6201250XXOO

R6201250XXOO

R6201250XXOO Rectifier Diode, 1 Phase, 1 Element, 500A, 1200V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2; R6201250XXOO
APTGT100A60TG

APTGT100A60TG

APTGT100A60TG Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP4, 12 PIN; APTGT100A60TG
VUO70-12NO7

VUO70-12NO7

VUO70-12NO7 Bridge Rectifier Diode, 3 Phase, 70A, 1200V V(RRM), Silicon,; VUO70-12NO7
VI-27F-EW

VI-27F-EW

VI-27F-EW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid,; VI-27F-EW
APT40GP90B2DQ2G

APT40GP90B2DQ2G

APT40GP90B2DQ2G Insulated Gate Bipolar Transistor, 101A I(C), 900V V(BR)CES, N-Channel, ROHS COMPLIANT, T-MAX, 3 PIN; APT40GP90B2DQ2G