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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

BD743A-S

BD743A-S

BD743A-S Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, FM-3; BD743A-S
R9G00412XX

R9G00412XX

R9G00412XX Rectifier Diode, 1 Phase, 1 Element, 1200A, 400V V(RRM), Silicon, R9G, 2 PIN; R9G00412XX
2SC5730TLR

2SC5730TLR

2SC5730TLR Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TSMT3, 3 PIN; 2SC5730TLR
KBU2502-G

KBU2502-G

KBU2502-G Bridge Rectifier Diode, 25A, 200V V(RRM),; KBU2502-G
Q8016RH4TP

Q8016RH4TP

Q8016RH4TP Alternistor TRIAC, 800V V(DRM), 16A I(T)RMS, TO-220AB, TO-220AB, 3 PIN; Q8016RH4TP
MRF8S21140HSR3

MRF8S21140HSR3

MRF8S21140HSR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET; MRF8S21140HSR3
2STR2215

2STR2215

2STR2215 1500mA, 15V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3; 2STR2215
HFA160MD40C

HFA160MD40C

HFA160MD40C DIODE 160 A, SILICON, RECTIFIER DIODE, TO-244AB, Rectifier Diode; HFA160MD40C
VI-B4T-IW

VI-B4T-IW

VI-B4T-IW DC-DC Booster Module, 100W; VI-B4T-IW
CS611616A

CS611616A

CS611616A Rectifier Diode, 1 Phase, 1 Element, 165A, 1600V V(RRM), Silicon, POW-R-BLOK-3; CS611616A