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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

SW20PHR320

SW20PHR320

SW20PHR320 Rectifier Diode, 1 Phase, 1 Element, 320A, 2000V V(RRM), Silicon,; SW20PHR320
VI-B41-CU

VI-B41-CU

VI-B41-CU DC-DC Booster Module, 1 Output, 200W, Hybrid, PACKAGE-9; VI-B41-CU
SKM40GB121D

SKM40GB121D

SKM40GB121D Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel,; SKM40GB121D
C50PB

C50PB

C50PB Silicon Controlled Rectifier, 125.6A I(T)RMS, 110000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, T50, 3 PIN; C50PB
CM300DU-12NFH

CM300DU-12NFH

CM300DU-12NFH IGBT Module In-stock / Mitsubishi: 600V 300A. Dual half-bridge for high frequency switching. 90-day warranty. Contact our sales team.
VI-B2B-IW

VI-B2B-IW

VI-B2B-IW DC-DC Booster Module; VI-B2B-IW
VSKH250-14

VSKH250-14

VSKH250-14 Silicon Controlled Rectifier, 555A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element, MAGN-A-PAK-5; VSKH250-14
T507064044AQ

T507064044AQ

T507064044AQ Silicon Controlled Rectifier, 63A I(T)RMS, 63000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-94, TO-94, 3 PIN; T507064044AQ
JANTX2N2484UB

JANTX2N2484UB

JANTX2N2484UB Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC SEALED, CERAMIC, CERSOT-3; JANTX2N2484UB
VI-BWB-CW

VI-BWB-CW

VI-BWB-CW DC-DC Booster Module, 100W; VI-BWB-CW