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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

PM75CLA120

PM75CLA120

Mitsubishi intelligent power modules flat-base type insulated package 1200 Volts 75Amperes
VI-B63-IU

VI-B63-IU

VI-B63-IU DC-DC Booster Module, 1 Output, 200W, Hybrid, PACKAGE-9; VI-B63-IU
2SB1184TLP

2SB1184TLP

2SB1184TLP Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, CPT3, SC-63, 3 PIN; 2SB1184TLP
MRF6S20010NR1

MRF6S20010NR1

MRF6S20010NR1 S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA; MRF6S20010NR1
2SA1746

2SA1746

2SA1746 Power Bipolar Transistor, 12A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-3PF, FM100, 3 PIN; 2SA1746
2SC1741ASTPQ

2SC1741ASTPQ

2SC1741ASTPQ Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SPT, 3 PIN; 2SC1741ASTPQ
MG15N2YK1

MG15N2YK1

MG15N2YK1 Power Bipolar Transistor, 15A I(C), 1-Element,; MG15N2YK1
T820087504DH

T820087504DH

T820087504DH Silicon Controlled Rectifier, 1175A I(T)RMS, 750000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, T82, 3 PIN; T820087504DH
CDSV6-99SD-G

CDSV6-99SD-G

CDSV6-99SD-G Rectifier Diode, 2 Element, 75V V(RRM),; CDSV6-99SD-G
MMBD7000-E3-08

MMBD7000-E3-08

MMBD7000-E3-08 Rectifier Diode, 2 Element, 0.2A, 100V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3; MMBD7000-E3-08