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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

2N5951

2N5951

2N5951 RF Small Signal Field-Effect Transistor; 2N5951
SMBH1G200US60

SMBH1G200US60

SMBH1G200US60 Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, 7PM-BA, 7 PIN; SMBH1G200US60
SBE808-TL-E

SBE808-TL-E

SBE808-TL-E Schottky Barrier Diode, 15V, 1A, Low IR, Non-Monolithic Dual MCPH5, MCPH5, 3000-REEL; SBE808-TL-E
T727024854DN

T727024854DN

T727024854DN Silicon Controlled Rectifier, 750A I(T)RMS, 750000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, CASE T72, 3 PIN; T727024854DN
BAT54ADW-TP

BAT54ADW-TP

BAT54ADW-TP Rectifier Diode, Schottky, 4 Element, 0.2A, 30V V(RRM), Silicon, ROHS COMPLIANT, ULTRA SMALL, PLASTIC PACKAGE-6; BAT54ADW-TP
STPS16170CG-TR

STPS16170CG-TR

STPS16170CG-TR 170 V, 16 A dual Power Schottky Rectifier; STPS16170CG-TR
2SC5964-TD-E

2SC5964-TD-E

2SC5964-TD-E Bipolar Transistor, (-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single PCP, SOT-89 / PCP-1, 1000-REEL; 2SC5964-TD-E
KE7212A1

KE7212A1

KE7212A1 Power Bipolar Transistor, 15A I(C), 1200V V(BR)CEO, 6-Element, NPN, Silicon, Plastic/Epoxy, 17 Pin, D43, 17 PIN; KE7212A1
C431M1

C431M1

C431M1 Silicon Controlled Rectifier, 950A I(T)RMS, 600000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, POW-R-DISC-4; C431M1
VI-B52-CV

VI-B52-CV

VI-B52-CV DC-DC Booster Module, 1 Output, 150W, Hybrid, 4.600 X 2.400 INCH, 0.500 INCH HEIGHT, MODULE-9; VI-B52-CV