SI1029X-T1-E3 Small Signal Field-Effect Transistor, 0.305A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SC-89, 6 PIN; SI1029X-T1-E3
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.