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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

APT53F80J

APT53F80J

APT53F80J Power Field-Effect Transistor, 53A I(D), 800V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOTOP-4; APT53F80J
GA200SA60S

GA200SA60S

GA200SA60S Insulated Gate Bipolar Transistor, 342A I(C), 600V V(BR)CES, N-Channel, SOT-227, 4 PIN; GA200SA60S
DRC5144V0L

DRC5144V0L

DRC5144V0L Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI3-F2-B, SC-85, 3 PIN; DRC5144V0L
IRGS6B60KPBF

IRGS6B60KPBF

IRGS6B60KPBF Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, D2PAK-3; IRGS6B60KPBF
APTGF10X120E2G

APTGF10X120E2G

APTGF10X120E2G Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel, MODULE-17; APTGF10X120E2G
VI-BWR-CV

VI-BWR-CV

VI-BWR-CV DC-DC Booster Module; VI-BWR-CV
VI-B7V-IV

VI-B7V-IV

VI-B7V-IV DC-DC Booster Module; VI-B7V-IV
VI-B6X-IU

VI-B6X-IU

VI-B6X-IU DC-DC Booster Module, 1 Output, 200W, Hybrid, PACKAGE-9; VI-B6X-IU
SDP20S30

SDP20S30

SDP20S30 Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 300V V(RRM), Silicon Carbide, TO-220AB, ROHS COMPLIANT, T-220, 3 PIN; SDP20S30
L542

L542

L542 Silicon Controlled Rectifier, 27000mA I(T), 600V V(RRM), 4 Element, ROHS COMPLIANT PACKAGE-8; L542