IXGK28N140B3H1 Insulated Gate Bipolar Transistor, 60A I(C), 1400V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN; IXGK28N140B3H1
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.