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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

IXFH26N50Q

IXFH26N50Q

IXFH26N50Q Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3; IXFH26N50Q
MURB1620CTRG

MURB1620CTRG

MURB1620CTRG Power Rectifier, Ultra-Fast Recovery, Common Anode, 16 A, 200 V, D2PAK 2 LEAD, 50-TUBE; MURB1620CTRG
7MBR100UB120

7MBR100UB120

7MBR100UB120 Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-35; 7MBR100UB120
DT250N16KOF

DT250N16KOF

DT250N16KOF Silicon Controlled Rectifier, 410A I(T)RMS, 250000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 Element, MODULE-5; DT250N16KOF
VI-211-CW

VI-211-CW

VI-211-CW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid,; VI-211-CW
MBR20150CTTU

MBR20150CTTU

MBR20150CTTU Dual High Voltage Schottky Rectifier, 1000-TUBE; MBR20150CTTU
MDI100-12A3

MDI100-12A3

MDI100-12A3 Insulated Gate Bipolar Transistor, 135A I(C), 1200V V(BR)CES, N-Channel,; MDI100-12A3
ND430825

ND430825

ND430825 Silicon Controlled Rectifier, 393A I(T)RMS, 250000mA I(T), 800V V(DRM), 800V V(RRM), 2 Element, POW-R-BLOK-7; ND430825
VI-J0B-EX

VI-J0B-EX

VI-J0B-EX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-J0B-EX
2SC1741ASTPR

2SC1741ASTPR

2SC1741ASTPR Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SPT, 3 PIN; 2SC1741ASTPR