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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

DTC115TKAT146

DTC115TKAT146

DTC115TKAT146 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SC-59, 3 PIN; DTC115TKAT146
MRFG35010NT1

MRFG35010NT1

MRFG35010NT1 RF POWER, FET; MRFG35010NT1
SEMIX201GD128DS

SEMIX201GD128DS

SEMIX201GD128DS Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, CASE SEMIX 13S, 20 PIN; SEMIX201GD128DS
2SC3646T-TD-E

2SC3646T-TD-E

2SC3646T-TD-E Bipolar Transistor, 100V, 1A, Low VCE(sat), (PNP)NPN Single PCP hFE = 200 - 400, SOT-89 / PCP-1, 1000-REEL; 2SC3646T-TD-E
VI-24K-IV

VI-24K-IV

VI-24K-IV DC-DC Regulated Power Supply Module, 1 Output, 150W, Hybrid,; VI-24K-IV
MG200H2CK1

MG200H2CK1

MG200H2CK1 IGBT Module In-stock / Toshiba: 600V 200A. Reliable power control. 90-day warranty, motor drive. Global shipping. Request pricing now.
1DI50F-120

1DI50F-120

1DI50F-120 Power Bipolar Transistor, 50A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 7 Pin; 1DI50F-120
VI-J0V-CX

VI-J0V-CX

VI-J0V-CX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-J0V-CX
SM2G300US60

SM2G300US60

SM2G300US60 Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, 7PM-BA, 7 PIN; SM2G300US60
YW1512

YW1512

YW1512 Converter,; YW1512