JD225005 Power Field-Effect Transistor, 50A I(D), 500V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER MODULE-7; JD225005
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.