IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

MCD225-12IO1

MCD225-12IO1

MCD225-12IO1 Silicon Controlled Rectifier, 400A I(T)RMS, 221000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element,; MCD225-12IO1
2SA1515STPR

2SA1515STPR

2SA1515STPR Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, SC-72, 3 PIN; 2SA1515STPR
2SC4115STPQ

2SC4115STPQ

2SC4115STPQ Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, SPT, SC-72, 3 PIN; 2SC4115STPQ
2N6565

2N6565

2N6565 Silicon Controlled Rectifier, 0.8A I(T)RMS, 510mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3; 2N6565
T1050H-6I

T1050H-6I

T1050H-6I 10 A - 600 V - 150 °C H-series Triacs; T1050H-6I
2N5191G

2N5191G

2N5191G 4.0 A, 60 V NPN Bipolar Power Transistor, TO-225, 500-BLKBX; 2N5191G
M5010012FV

M5010012FV

M5010012FV Silicon Controlled Rectifier, 100000mA I(T), 600V V(RRM), 2 Element, MODULE-6; M5010012FV
GBJ601-F

GBJ601-F

GBJ601-F Bridge Rectifier Diode, 1 Phase, 6A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBJ, 4 PIN; GBJ601-F
VI-J3Y-IX

VI-J3Y-IX

VI-J3Y-IX DC-DC Regulated Power Supply Module, 1 Output, Hybrid,; VI-J3Y-IX
PS12012-A

PS12012-A

PS12012-A Motion Control Electronic, Hybrid; PS12012-A