IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

ZV952V2TA

ZV952V2TA

ZV952V2TA Variable Capacitance Diode, 14.2pF C(T), 12V, Silicon, Hyperabrupt, SURFACE MOUNT PACKAGE-2; ZV952V2TA
L401E3RP

L401E3RP

L401E3RP 4 Quadrant Logic Level TRIAC, 400V V(DRM), 1A I(T)RMS, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3; L401E3RP
PC25016

PC25016

PC25016 Rectifier Diode, 1 Phase, 2 Element, 250A, 1600V V(RRM), Silicon,; PC25016
MJD112RL

MJD112RL

MJD112RL 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 1800-REEL; MJD112RL
VI-B60-CV

VI-B60-CV

VI-B60-CV DC-DC Booster Module, 1 Output, 150W, Hybrid, 4.600 X 2.400 INCH, 0.500 INCH HEIGHT, MODULE-9; VI-B60-CV
VI-JTN-CW

VI-JTN-CW

VI-JTN-CW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid, HALF BRICK PACKAGE-9; VI-JTN-CW
SD57045-01

SD57045-01

SD57045-01 45W 28V HF to 1GHz LDMOS TRANSISTOR in flangeless package; SD57045-01
VI-214-EX

VI-214-EX

VI-214-EX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-214-EX
TBS706350HHE

TBS706350HHE

TBS706350HHE Silicon Controlled Rectifier, 6595A I(T)RMS, 3500000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, HERMETIC SEALED PACKAGE-4; TBS706350HHE
IRFH6200TRPBF

IRFH6200TRPBF

IRFH6200TRPBF Power Field-Effect Transistor, 45A I(D), 20V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8; IRFH6200TRPBF