IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

MDA600-14N1

MDA600-14N1

MDA600-14N1 Rectifier Diode, 1 Phase, 2 Element, 883A, 1400V V(RRM), Silicon, MODULE-3; MDA600-14N1
T600141504BT

T600141504BT

T600141504BT Silicon Controlled Rectifier, 235A I(T)RMS, 150000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element, TO-93, HERMETIC SEALED, T60, 3 PIN; T600141504BT
MCH6541-TL-E

MCH6541-TL-E

MCH6541-TL-E Bipolar Transistor, (-)30V, (-)3A, Low VCE(sat) Complementary Dual MCPH6, SC 88FL / MCPH6, 3000-REEL; MCH6541-TL-E
CDBHM240L-HF

CDBHM240L-HF

CDBHM240L-HF Rectifier Diode, Schottky, 4 Element, 2A, 40V V(RRM),; CDBHM240L-HF
NRVBD640CTT4G

NRVBD640CTT4G

NRVBD640CTT4G Schottky Barrier Rectifier, 40 V, 6.0 A, DPAK (SINGLE GAUGE) TO-252, 2500-REEL; NRVBD640CTT4G
S6015L52

S6015L52

S6015L52 Silicon Controlled Rectifier, 15A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN; S6015L52
S4X8ES

S4X8ES

S4X8ES Silicon Controlled Rectifier, 0.8A I(T)RMS, 800mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-92, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3; S4X8ES
MRF171A

MRF171A

MRF171A RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 211-07, 4 PIN; MRF171A
VS-P402

VS-P402

VS-P402 Silicon Controlled Rectifier,; VS-P402
R9G01412XX

R9G01412XX

R9G01412XX Rectifier Diode, 1 Phase, 1 Element, 1680A, 1400V V(RRM), Silicon,; R9G01412XX