IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

BC847BPDW1T2G

BC847BPDW1T2G

BC847BPDW1T2G NPN PNP Bipolar Transistor, SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL; BC847BPDW1T2G
DD90F120

DD90F120

DD90F120 Rectifier Diode,; DD90F120
MCC170-14io1

MCC170-14io1

MCC170-14io1 Silicon Controlled Rectifier, 350A I(T)RMS, 203000mA I(T), 1400V V(DRM), 1400V V(RRM), 2 Element; MCC170-14io1
MPSA63RLRA

MPSA63RLRA

MPSA63RLRA Darlington Transistors, TO-92 (TO-226) 5.33mm Body Height, 2000-REEL; MPSA63RLRA
SI3850ADV-T1-E3

SI3850ADV-T1-E3

SI3850ADV-T1-E3 TRANSISTOR 1400 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal; SI3850ADV-T1-E3
MBR3045STG

MBR3045STG

MBR3045STG Schottky Barrier Rectifier, 30 A, 45 V, TO-220 3 LEAD STANDARD, 50-TUBE; MBR3045STG
MJ75BX-100

MJ75BX-100

MJ75BX-100 Power Bipolar Transistor, 75A I(C), 1-Element; MJ75BX-100
APTGF180DH60G

APTGF180DH60G

APTGF180DH60G Insulated Gate Bipolar Transistor, 220A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP6, MODULE-8; APTGF180DH60G
VI-B10-IV

VI-B10-IV

VI-B10-IV DC-DC Booster Module, 1 Output, 150W, Hybrid, 4.600 X 2.400 INCH, 0.500 INCH HEIGHT, MODULE-9; VI-B10-IV
MDR150A40M

MDR150A40M

MDR150A40M Rectifier Diode, 1 Element, 150A, 400V V(RRM); MDR150A40M