IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

MPS2907AZL1G

MPS2907AZL1G

MPS2907AZL1G 600mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN; MPS2907AZL1G
W0508RB12

W0508RB12

W0508RB12 DIODE 375 A, 1200 V, SILICON, RECTIFIER DIODE, Rectifier Diode; W0508RB12
TA20021803DH

TA20021803DH

TA20021803DH Silicon Controlled Rectifier, 2820A I(T)RMS, 1800000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, HERMETIC SEALED, TA2, 2 PIN; TA20021803DH
CC411699A

CC411699A

CC411699A Rectifier Diode, 1 Phase, 2 Element, 100A, 1600V V(RRM), Silicon, POW-R-BLOK-3; CC411699A
MJD112RLG

MJD112RLG

MJD112RLG 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 1800-REEL; MJD112RLG
VI-26L-IX

VI-26L-IX

VI-26L-IX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-26L-IX
VI-J4M-EZ

VI-J4M-EZ

VI-J4M-EZ DC-DC Regulated Power Supply Module, 1 Output, 25W, Hybrid,; VI-J4M-EZ
MRF8P26080HSR3

MRF8P26080HSR3

MRF8P26080HSR3 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET; MRF8P26080HSR3
GA100TS60SF

GA100TS60SF

GA100TS60SF Insulated Gate Bipolar Transistor, 220A I(C), 600V V(BR)CES, N-Channel, INT-A-PAK-7; GA100TS60SF
F1857DH1000

F1857DH1000

F1857DH1000 Silicon Controlled Rectifier, 86.35A I(T)RMS, 55000mA I(T), 1000V V(RRM), 1 Element, ROHS COMPLIANT PACKAGE-5; F1857DH1000