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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

FDMC86102LZ

FDMC86102LZ

FDMC86102LZ N-Channel Shielded Gate Power Trench® MOSFET 100V, 22A, 24mΩ, 3000-REEL; FDMC86102LZ
DDTA114WE-7-F

DDTA114WE-7-F

DDTA114WE-7-F Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, GREEN, PLASTIC PACKAGE-3; DDTA114WE-7-F
CDBD2060-HF

CDBD2060-HF

CDBD2060-HF Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 60V V(RRM), Silicon, TO-263AB, TO-263, D2PAK-2; CDBD2060-HF
IKD15N60R

IKD15N60R

IKD15N60R Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-252, DPAK-3; IKD15N60R
FDD8447L_F085

FDD8447L_F085

FDD8447L_F085 40V, 50A, 7.0mΩ, DPAK N-Channel PowerTrench®, TO-252 3L (DPAK), 5000-TAPE REEL; FDD8447L_F085
MWI60-06G6K

MWI60-06G6K

MWI60-06G6K Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, MODULE-24; MWI60-06G6K
IGB20N60H3

IGB20N60H3

IGB20N60H3 Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN; IGB20N60H3
2N4401RLRMG

2N4401RLRMG

2N4401RLRMG 600mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, LEAD FREE, CASE 29-11, TO-226AA, 3 PIN; 2N4401RLRMG
SI6969DQ-T1-E3

SI6969DQ-T1-E3

SI6969DQ-T1-E3 Power Field-Effect Transistor, 4.6A I(D), 12V, 0.034ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8; SI6969DQ-T1-E3
MIXA30W1200TML

MIXA30W1200TML

MIXA30W1200TML Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, MODULE-24; MIXA30W1200TML