IGBT Modules - Transistors from Mitsubishi & Fuji - Page 3325

AON7244

AON7244 Power Field-Effect Transistor, 50A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, GREEN, EP, DFN-8; AON7244

Alpha & Omega Semiconductor Inc Qty: 6198pcs

VI-20F-EY

VI-20F-EY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-20F-EY

VICOR Qty: 445pcs

HS247200

HS247200 Rectifier Diode, Schottky, 1 Phase, 1 Element, 240A, 180V V(RRM), Silicon, PACKAGE-2; HS247200

Microsemi Power Products Group Qty: 2057pcs

VKI50-12P1

VKI50-12P1 Insulated Gate Bipolar Transistor, 49A I(C), 1200V V(BR)CES, N-Channel, ECOPAC-16; VKI50-12P1

IXYS Qty: 1384pcs

VBO130-18NO7

VBO130-18NO7 Bridge Rectifier Diode, 1 Phase, 115A, 1800V V(RRM), Silicon, ROHS COMPLIANT, MODULE-4; VBO130-18NO7

IXYS Qty: 1681pcs

V375B24C300AN

V375B24C300AN DC-DC Regulated Power Supply Module, 1 Output, 300W, Hybrid; V375B24C300AN

VICOR Qty: 106pcs

ULQ2004AD

ULQ2004AD High-Voltage, High-Current Darlington Transistor Array 16-SOIC -40 to 85; ULQ2004AD

Texas Instruments Qty: 2017pcs

CD240602

CD240602 Rectifier Diode, 1 Phase, 2 Element, 20A, 600V V(RRM), Silicon,; CD240602

PRX Qty: -184pcs

CM30TF-12E

CM30TF-12E 6IGBT: 30A 600V

Mitsubishi Qty: 236pcs Price: US$31

BSM300GA120DLC

BSM300GA120DLC Insulated Gate Bipolar Transistor, 570A I(C), 1200V V(BR)CES, N-Channel, MODULE-5; BSM300GA120DLC

SIEMENS Qty: 178pcs