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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

CS5F-1000-P

CS5F-1000-P

CS5F-1000-P Electric Fuse, Super Fast Blow, 1000A, 500VAC, 200000A (IR), Inline/holder; CS5F-1000-P
S4010R

S4010R

S4010R Silicon Controlled Rectifier, 10A I(T)RMS, 10000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3; S4010R
TIP112G

TIP112G

TIP112G Medium Power NPN Darlington Bipolar Power Transistor NPN , 2.0 A, 100 V, TO-220 3 LEAD STANDARD, 50-TUBE; TIP112G
VI-23Z-IU

VI-23Z-IU

VI-23Z-IU DC-DC Regulated Power Supply Module, 1 Output, 200W, Hybrid, MODULE-9; VI-23Z-IU
BAS40-04-E3-08

BAS40-04-E3-08

BAS40-04-E3-08 Rectifier Diode, Schottky, 2 Element, 0.2A, 40V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3; BAS40-04-E3-08
VS-SD2500C16K

VS-SD2500C16K

VS-SD2500C16K Rectifier Diode,; VS-SD2500C16K
183NQ100R

183NQ100R

183NQ100R Rectifier Diode, Schottky, 1 Phase, 1 Element, 180A, 100V V(RRM), Silicon, PLASTIC, D-67, HALF PACK-1; 183NQ100R
DRA2124X0L

DRA2124X0L

DRA2124X0L Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AA, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, SC-59A, 3 PIN; DRA2124X0L
BC327-25-AP

BC327-25-AP

BC327-25-AP Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3; BC327-25-AP
APTGT75DH120TG

APTGT75DH120TG

APTGT75DH120TG Insulated Gate Bipolar Transistor, 110A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SP4, 14 PIN; APTGT75DH120TG