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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

2N5550G

2N5550G

2N5550G Small Signal NPN Bipolar Transistor, TO-92 (TO-226) 5.33mm Body Height, 5000-BLKBX; 2N5550G
TIP101G

TIP101G

TIP101G 8.0 A, 100 V NPN Darlington Bipolar Power Transistor, TO-220 3 LEAD STANDARD, 50-TUBE; TIP101G
VI-2NY-EU

VI-2NY-EU

VI-2NY-EU DC-DC Regulated Power Supply Module, 1 Output, 200W, Hybrid, MODULE-9; VI-2NY-EU
VW2X60-08IO1

VW2X60-08IO1

VW2X60-08IO1 Silicon Controlled Rectifier, 43A I(T)RMS, 27000mA I(T), 800V V(DRM), 800V V(RRM), 4 Element, V1-PACK-8; VW2X60-08IO1
VS-MURB2020CTPBF

VS-MURB2020CTPBF

VS-MURB2020CTPBF Rectifier Diode, 1 Phase, 2 Element, 10A, 200V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, D2PAK-3; VS-MURB2020CTPBF
MRF175GV

MRF175GV

MRF175GV RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 375-04, 4 PIN; MRF175GV
2N7000BU

2N7000BU

2N7000BU Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET; 2N7000BU
KSP56TA

KSP56TA

KSP56TA Small Signal Bipolar Transistor; KSP56TA
S4016NRP

S4016NRP

S4016NRP Silicon Controlled Rectifier, 16A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-263AA, ROHS COMPLIANT, PLASTIC, D2PAK-3; S4016NRP
APTGF350DU60G

APTGF350DU60G

APTGF350DU60G Insulated Gate Bipolar Transistor, 430A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP6, MODULE-7; APTGF350DU60G