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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

MCD310-12io1

MCD310-12io1

MCD310-12io1 Silicon Controlled Rectifier, 500A I(T)RMS, 320000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, MODULE-5; MCD310-12io1
RM100CZ-24

RM100CZ-24

RM100CZ-24 Rectifier Diode, 1 Phase, 2 Element, 100A, 1200V V(RRM), Silicon,; RM100CZ-24
MCD224-20IO1

MCD224-20IO1

MCD224-20IO1 Silicon Controlled Rectifier, 400A I(T)RMS, 240000mA I(T), 2000V V(DRM), 2000V V(RRM), 2 Element, MODULE-7; MCD224-20IO1
TD36N12

TD36N12

TD36N12 Silicon Controlled Rectifier, 80A I(T)RMS, 36000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, MODULE-5; TD36N12
IXFN72N55Q2

IXFN72N55Q2

IXFN72N55Q2 Power Field-Effect Transistor, 72A I(D), 550V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4; IXFN72N55Q2
VI-26R-IV

VI-26R-IV

VI-26R-IV DC-DC Regulated Power Supply Module, 1 Output, 150W, Hybrid, PACKAGE-9; VI-26R-IV
MG100H2YL1

MG100H2YL1

MG100H2YL1 IGBT Module In-stock / Toshiba: 1200V 100A dual device for efficient power switching. 90-day warranty, for motor drives & VFDs. Global fast shipping. Get quote.
KSB546Y

KSB546Y

KSB546Y Power Bipolar Transistor; KSB546Y
MCC19-08io8B

MCC19-08io8B

MCC19-08io8B Silicon Controlled Rectifier, 40A I(T)RMS, 18000mA I(T), 800V V(DRM), 800V V(RRM), 2 Element, TO-240AA, TO-240AA, 5 PIN; MCC19-08io8B
VCD105-16IO7

VCD105-16IO7

VCD105-16IO7 Silicon Controlled Rectifier, 180A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, ECOPAC-10; VCD105-16IO7