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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

MI-J52-MY

MI-J52-MY

MI-J52-MY 1-OUTPUT 50W DC-DC REG PWR SUPPLY MODULE, PLASTIC, PACKAGE-9; MI-J52-MY
PD85025-E

PD85025-E

PD85025-E 25W 13.6V 870MHz LDMOS in PowerSO-10RF plastic package; PD85025-E
MCR100-6ZL1G

MCR100-6ZL1G

MCR100-6ZL1G Sensitive Gate Silicon Controlled Rectifier - SCR, TO-92 (TO-226) 5.33mm Body Height, 2000-FNFLD; MCR100-6ZL1G
2N6052G

2N6052G

2N6052G 12 A, 100 V PNP Darlington Bipolar Power Transistor, TO-204 (TO-3), 100-FTRAY; 2N6052G
T727064864DN

T727064864DN

T727064864DN Silicon Controlled Rectifier, 750A I(T)RMS, 750000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, CASE T72, 3 PIN; T727064864DN
R9G01222XX

R9G01222XX

R9G01222XX Rectifier Diode, 1 Phase, 1 Element, 3400A, 1200V V(RRM), Silicon,; R9G01222XX
PBMB300A6

PBMB300A6

PBMB300A6 Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel; PBMB300A6
SI7909DN-T1-GE3

SI7909DN-T1-GE3

SI7909DN-T1-GE3 Power Field-Effect Transistor, 5.3A I(D), 12V, 0.037ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8; SI7909DN-T1-GE3
CD411899B

CD411899B

CD411899B Rectifier Diode, 1 Phase, 2 Element, 100A, 1800V V(RRM), Silicon, POW-R-BLOK-3; CD411899B
MCD44-18IO1B

MCD44-18IO1B

MCD44-18IO1B Silicon Controlled Rectifier, 80A I(T)RMS, 49000mA I(T), 1800V V(DRM), 1800V V(RRM), 1 Element, TO-240AA, TO-240AA, 5 PIN; MCD44-18IO1B