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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

BSZ018NE2LS

BSZ018NE2LS

BSZ018NE2LS Power Field-Effect Transistor, 23A I(D), 25V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8, 8 PIN; BSZ018NE2LS
MCMA35PD1200TB

MCMA35PD1200TB

MCMA35PD1200TB Silicon Controlled Rectifier, 35000mA I(T), 1200V V(RRM),; MCMA35PD1200TB
T7271045B4DN

T7271045B4DN

T7271045B4DN Silicon Controlled Rectifier, 700A I(T)RMS, 700000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, CASE T72, 3 PIN; T7271045B4DN
IGP20N60H3

IGP20N60H3

IGP20N60H3 Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC PACKAGE-3; IGP20N60H3
2N7002W-7-F

2N7002W-7-F

2N7002W-7-F Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, ULTRA SMALL, PLASTIC PACKAGE-3; 2N7002W-7-F
BC33816TA

BC33816TA

BC33816TA Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92; BC33816TA
FRS400BA50

FRS400BA50

FRS400BA50 Rectifier Diode; FRS400BA50
SK100DAL100D

SK100DAL100D

SK100DAL100D Power Bipolar Transistor, 100A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 11 Pin,; SK100DAL100D
2SD1805F-E

2SD1805F-E

2SD1805F-E Bipolar Transistor, 20V, 5A, Low VCE(sat), NPN Single TP/TP-FA, DPAK / TP-FA, 500-BLKBG; 2SD1805F-E
VI-27V-EX

VI-27V-EX

VI-27V-EX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-27V-EX