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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

IRG4BC30KDSTRLP

IRG4BC30KDSTRLP

IRG4BC30KDSTRLP Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3; IRG4BC30KDSTRLP
2SC4138

2SC4138

2SC4138 Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT-100, TO-3P, 3 PIN; 2SC4138
VSKC320-12

VSKC320-12

VSKC320-12 Rectifier Diode, 1 Phase, 2 Element, 320A, 1200V V(RRM), Silicon, ROHS COMPLIANT, MAGN-A-PAK-3; VSKC320-12
KBPC3502-G

KBPC3502-G

KBPC3502-G Bridge Rectifier Diode, 35A, 200V V(RRM),; KBPC3502-G
BC327-AP

BC327-AP

BC327-AP Transistor,; BC327-AP
CM100MX-12A

CM100MX-12A

CM100MX-12A IGBT Module In-stock / Mitsubishi: 600V 100A. 5th Gen CSTBT technology in NX-Series package. 90-day warranty, VFD/Servo drive. Get quote.
ZDT6718TC

ZDT6718TC

ZDT6718TC Power Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 2-Element, NPN and PNP, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN; ZDT6718TC
VI-2W1-EX

VI-2W1-EX

VI-2W1-EX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-2W1-EX
VI-B1L-IV

VI-B1L-IV

VI-B1L-IV DC-DC Booster Module, 1 Output, 150W, Hybrid, 4.600 X 2.400 INCH, 0.500 INCH HEIGHT, MODULE-9; VI-B1L-IV
VI-J7B-CY

VI-J7B-CY

VI-J7B-CY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-J7B-CY