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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

GA125TS120U

GA125TS120U

GA125TS120U Insulated Gate Bipolar Transistor, 125A I(C), 1200V V(BR)CES, N-Channel, INT-A-PAK-7; GA125TS120U
IXGA12N60CD1

IXGA12N60CD1

IXGA12N60CD1 Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-263AB, D2PAK-3; IXGA12N60CD1
BAT54CTC

BAT54CTC

BAT54CTC Rectifier Diode, Schottky, 2 Element, 0.2A, Silicon,; BAT54CTC
VI-JTZ-IW

VI-JTZ-IW

VI-JTZ-IW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid, HALF BRICK PACKAGE-9; VI-JTZ-IW
T9G0081003DH

T9G0081003DH

T9G0081003DH Silicon Controlled Rectifier, 1570A I(T)RMS, 1000000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, T9G, 3 PIN; T9G0081003DH
T9G0141003DH

T9G0141003DH

T9G0141003DH Silicon Controlled Rectifier, 1570A I(T)RMS, 1000000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element, T9G, 3 PIN; T9G0141003DH
VI-B64-EW

VI-B64-EW

VI-B64-EW DC-DC Booster Module, 1 Output, 100W, Hybrid, 4.600 X 2.400 INCH, 0.500 INCH HEIGHT, MODULE-9; VI-B64-EW
GBU601-G

GBU601-G

GBU601-G Bridge Rectifier Diode, 6A, 100V V(RRM),; GBU601-G
VUO110-12NO7

VUO110-12NO7

VUO110-12NO7 Bridge Rectifier Diode, 3 Phase, 118A, 1200V V(RRM), Silicon, ROHS COMPLIANT, MODULE-5; VUO110-12NO7
KED24502

KED24502

KED24502 Power Bipolar Transistor, 20A I(C), 600V V(BR)CEO, 6-Element, NPN, Silicon, Plastic/Epoxy, 17 Pin, D42, 17 PIN; KED24502