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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

MBRF20H100CTG

MBRF20H100CTG

MBRF20H100CTG Schottky Barrier Rectifier, H-Series, 100 V, 20 A, TO-220 3 LEAD FULLPAK, 50-TUBE; MBRF20H100CTG
SBS822-TL-H

SBS822-TL-H

SBS822-TL-H Schottky Barrier Diode, 20V, 1A, Low VF Dual MCPH5, MCPH5, 3000-REEL; SBS822-TL-H
MDD44-06N1

MDD44-06N1

MDD44-06N1 Rectifier Diode, 59A, 600V V(RRM),; MDD44-06N1
VWO40-14IO7

VWO40-14IO7

VWO40-14IO7 Silicon Controlled Rectifier, 29A I(T)RMS, 18000mA I(T), 1400V V(DRM), 1400V V(RRM), 6 Element, MODULE-12; VWO40-14IO7
VI-27N-EU

VI-27N-EU

VI-27N-EU DC-DC Regulated Power Supply Module, 1 Output, 200W, Hybrid, MODULE-9; VI-27N-EU
CP10TD1-24A

CP10TD1-24A

CP10TD1-24A Insulated Gate Bipolar Transistor, 10A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-26; CP10TD1-24A
MSCD36-08

MSCD36-08

MSCD36-08 Rectifier Diode, 1 Phase, 2 Element, 36A, 800V V(RRM), Silicon, CASE D1, 3 PIN; MSCD36-08
NSVBC858CLT1G

NSVBC858CLT1G

NSVBC858CLT1G PNP Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL; NSVBC858CLT1G
VI-24M-EU

VI-24M-EU

VI-24M-EU DC-DC Regulated Power Supply Module, 1 Output, 200W, Hybrid, MODULE-9; VI-24M-EU
2SD2643

2SD2643

2SD2643 Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, FM100, TO-3PF, 3 PIN; 2SD2643