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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

2SB1326TV2R

2SB1326TV2R

2SB1326TV2R Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, ATV, 3 PIN; 2SB1326TV2R
VI-J41-EW

VI-J41-EW

VI-J41-EW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid, HALF BRICK PACKAGE-9; VI-J41-EW
2SA1488

2SA1488

2SA1488 Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220F, FM20, 3 PIN; 2SA1488
VI-J7P-EY

VI-J7P-EY

VI-J7P-EY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-J7P-EY
FDS8638

FDS8638

FDS8638 N-Channel PowerTrench® MOSFET 40V, 18A, 4.3mΩ, 2500-REEL; FDS8638
SW22HHR320

SW22HHR320

SW22HHR320 DIODE 320 A, 2200 V, SILICON, RECTIFIER DIODE, Rectifier Diode; SW22HHR320
VI-J4T-CZ

VI-J4T-CZ

VI-J4T-CZ DC-DC Regulated Power Supply Module, 1 Output, 25W, Hybrid,; VI-J4T-CZ
2STR1160

2STR1160

2STR1160 Low voltage fast-switching NPN power transistor; 2STR1160
PH150F280-28

PH150F280-28

PH150F280-28 DC-DC Regulated Power Supply Module, 1 Output, 150W,; PH150F280-28
DIM600BSS17-A

DIM600BSS17-A

DIM600BSS17-A Insulated Gate Bipolar Transistor, 600A I(C), 1700V V(BR)CES, N-Channel, B, MODULE-5; DIM600BSS17-A