FMC6G50US60 Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, 21PM-BA, 21 PIN; FMC6G50US60
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.