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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

NSBA115TDP6T5G

NSBA115TDP6T5G

NSBA115TDP6T5G Dual PNP Bipolar Digital Transistor (BRT), SOT-963 1x1, 0.35P, 8000-REEL; NSBA115TDP6T5G
5SDF07H4501

5SDF07H4501

5SDF07H4501 Rectifier Diode, 1 Phase, 1 Element, 900A, 4500V V(RRM), Silicon, H, 2 PIN; 5SDF07H4501
MJE5851G

MJE5851G

MJE5851G 8.0 A, 350 V PNP Bipolar Power Transistor, TO-220 3 LEAD STANDARD, 50-TUBE; MJE5851G
VI-JNP-IY

VI-JNP-IY

VI-JNP-IY VICOR DC-DC Regulated Power Supply Module, Output, 50W, 10A Hybrid
P2N2222AZL1

P2N2222AZL1

P2N2222AZL1 600mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-11, TO-226AA, 3 PIN; P2N2222AZL1
MMBTA14-7

MMBTA14-7

MMBTA14-7 Small Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3; MMBTA14-7
STTH16L06CT

STTH16L06CT

STTH16L06CT 600 V, 16 A dual Low Drop Ultrafast Diode; STTH16L06CT
CS8-08IO2

CS8-08IO2

CS8-08IO2 Silicon Controlled Rectifier, 25A I(T)RMS, 16000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-64, TO-64, 2 PIN; CS8-08IO2
NXP3875YR

NXP3875YR

NXP3875YR NXP3875Y; NXP3875G - 50 V, 150 mA NPN general-purpose transistors TO-236 3-Pin; NXP3875YR
2SA1694

2SA1694

2SA1694 Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, MT-100, TO-3P, 3 PIN; 2SA1694