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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

PK25GB80

PK25GB80

PK25GB80 Silicon Controlled Rectifier, 25000mA I(T), 800V V(RRM); PK25GB80
VI-J1J-IX

VI-J1J-IX

VI-J1J-IX DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid,; VI-J1J-IX
P2N2907A

P2N2907A

P2N2907A Transistor Silicon Plastic PNP, TO-92 (TO-226) 5.33mm Body Height, 5000-BLKBX; P2N2907A
ZXMC3AMCTA

ZXMC3AMCTA

ZXMC3AMCTA Power Field-Effect Transistor, 2.9A I(D), 30V, 0.12ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, DFN3020B-8, 8 PIN; ZXMC3AMCTA
MIXA30W1200TED

MIXA30W1200TED

MIXA30W1200TED Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, SIXPACK, E2-PACK-28; MIXA30W1200TED
MBRT500100

MBRT500100

MBRT500100 Rectifier Diode, Schottky, 1 Phase, 2 Element, 250A, 100V V(RRM), Silicon,; MBRT500100
AZ23C5V6-E3-18

AZ23C5V6-E3-18

AZ23C5V6-E3-18 Zener Diode, 5.6V V(Z), 5%, 0.3W, Silicon, Unidirectional, ROHS COMPLIANT, PLASTIC PACKAGE-3; AZ23C5V6-E3-18
CPH6904-TL-E

CPH6904-TL-E

CPH6904-TL-E N-Channel JFET, 25V, 20 to 40mA, 40mS, Dual CPH6, CPH6, 3000-REEL; CPH6904-TL-E
IXXH60N65C4

IXXH60N65C4

IXXH60N65C4 Insulated Gate Bipolar Transistor, 118A I(C), 650V V(BR)CES, N-Channel,; IXXH60N65C4
MWI80-12T6K

MWI80-12T6K

MWI80-12T6K Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, E1-PACK, SIXPACK-24; MWI80-12T6K