IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

ZXTD619MCTA

ZXTD619MCTA

ZXTD619MCTA Small Signal Bipolar Transistor, 4A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, GREEN, PLASTIC, DFN3020B-8, 8 PIN; ZXTD619MCTA
VBO19-12NO7

VBO19-12NO7

VBO19-12NO7 Bridge Rectifier Diode, 1 Phase, 21A, 1200V V(RRM), Silicon,; VBO19-12NO7
VI-2NW-CW

VI-2NW-CW

VI-2NW-CW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid,; VI-2NW-CW
STPS40M80CR

STPS40M80CR

STPS40M80CR Power Schottky rectifier; STPS40M80CR
6MBI75-060

6MBI75-060

6MBI75-060 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES; 6MBI75-060
DDTC144VE-7-F

DDTC144VE-7-F

DDTC144VE-7-F Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PLASTIC PACKAGE-3; DDTC144VE-7-F
KS621K1KHB

KS621K1KHB

KS621K1KHB Power Bipolar Transistor, 1000A I(C), 1-Element,; KS621K1KHB
T607061864BT

T607061864BT

T607061864BT Silicon Controlled Rectifier, 275A I(T)RMS, 275000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-93, TO-93, 3 PIN; T607061864BT
A390D

A390D

A390D Rectifier Diode, 1 Phase, 1 Element, 400A, 400V V(RRM), Silicon, HERMETIC SEALED, CERAMIC, R62, 2 PIN; A390D
MWI300-12E9

MWI300-12E9

MWI300-12E9 Insulated Gate Bipolar Transistor, 530A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-29; MWI300-12E9