DIM1800ESM17-E Insulated Gate Bipolar Transistor, 1800A I(C), 1700V V(BR)CES, N-Channel, PLASTIC, E, 9 PIN; DIM1800ESM17-E
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.