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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

MBM200JS12AW

MBM200JS12AW

MBM200JS12AW Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES; MBM200JS12AW
CC611616A

CC611616A

CC611616A Rectifier Diode, 1 Phase, 2 Element, 165A, 1600V V(RRM), Silicon, POW-R-BLOK-3; CC611616A
VI-B5K-EW

VI-B5K-EW

VI-B5K-EW DC-DC Booster Module, 100W; VI-B5K-EW
VI-J63-IZ

VI-J63-IZ

VI-J63-IZ DC-DC Regulated Power Supply Module, 1 Output, 25W, Hybrid,; VI-J63-IZ
2RI150E-060

2RI150E-060

2RI150E-060 Rectifier Diode, 1 Phase, 2 Element, 150A, 600V V(RRM), Silicon,; 2RI150E-060
T835H-6T

T835H-6T

T835H-6T 8 A - 600 V - 150°C H-series Triacs; T835H-6T
BSM101AR

BSM101AR

BSM101AR Power Field-Effect Transistor, 200A I(D), 50V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; BSM101AR
7MBR35SB120

7MBR35SB120

7MBR35SB120 IGBT Module In-stock / Fuji Electric: 1200V 35A in a 7-in-1 Power Integrated Module (PIM). 90-day warranty, for motor drives and UPS. Global fast shipping. Request pricing now.
TIP31

TIP31

TIP31 NPN Bipolar Power Transistor, 50-TUBE; TIP31
FST8360M

FST8360M

FST8360M Rectifier Diode, Schottky, 1 Phase, 2 Element, 40A, 60V V(RRM), Silicon,; FST8360M